P-type and n–type semiconductor are both classification of extrinsic semiconductors. The major factor that generates a difference between p-type and n-type semiconductor is the material used in doping the intrinsic semiconductor (pure conductor).

The n-type semiconductor material is formed by addition of group V elements (pentavalent impurity) to a pure conductor intrinsic semiconductor).  Examples penta-valent impurities include Arsenic, Antimony, Phosphorous, Bismuth etc. On the other hand, a p-type semiconductor material is formed by addition of group III elements, popularly referred to as trivalent impurity to a pure semiconductor. Examples of trivalent impurity include Aluminium, Gallium and Indium.

Key Difference

1. A p-type semiconductor is formed when group III elements of the periodic table are doped to a pure semiconductor material whereas an n-type semiconductor is formed when group V elements of the period table are doped to an intrinsic semiconductor.
2. Trivalent impurity like Aluminium, Gallium and Indium is added in the p-type semiconductor whereas in n-type semiconductor, penta-valent impurity like Arsenic, Antimony, Phosphorous, Bismuth etc are added.
3. The impurity added in p-type semiconductor provides holes referred to as Acceptor atom while in n-type semiconductor, impurity provides extra electrons referred to as Donor atom.
4. In a p-type semiconductor, the majority carriers are holes and minority carriers are electrons whereas in the n-type semiconductor, electrons are majority carriers and holes are minority carriers.
5. In the p-type semiconductor, the acceptor energy level is close to the valence band and away from the conduction band. On the other hand, in an n-type semiconductor, the donor energy level is close to the conduction band and away from the valence band.
6. In p-type, because of majority carrier influence, the density of holes is comparatively greater than the density of electrons. In n-type, given that majority of carriers are electrons; the density of electrons is comparatively greater than that of holes.
7. The Fermi level of the of the p-type semiconductor lies between the acceptor energy level and the valence band whereas  Fermi level of the n-type semiconductor lies between donor energy level and the conduction band.
8. In p-type the major concentration of the carrier’s movement can be observed from a higher level of concentration to a lower level of concentration. On the other hand, the majority of the carrier’s movement can be seen from lower level to higher level.
9. In p-type semiconductor, concentration of holes is high and therefore p-type carries the positive charge. On the other hand, in n-type, the electrons are majority carriers, hence the n-type preferably carries a negative charge.
10. The concentration of holes is more in p-type semiconductors whereas the concentration of electrons is more in n-type.

Also Read: Difference Between Intrinsic And Extrinsic Semiconductor

Difference Between P-type And N-type Semiconductor In Tabular Form